发明名称
摘要 A semiconductor device has a through-hole cut in the insulating layer beneath the bonding pad of the wiring layer having a bonding pad onto which a metal wiring is to be connected and this wiring layer is connected through the through-hole with the lower wiring layer so that the connection between the wiring layer having a bonding pad and the lower wiring layer rarely corrodes or becomes disconnected.
申请公布号 JPS5851425(B2) 申请公布日期 1983.11.16
申请号 JP19750101245 申请日期 1975.08.22
申请人 HITACHI LTD 发明人 SATONAKA KOICHIRO
分类号 H01L23/52;H01L21/312;H01L21/3205;H01L21/60;H01L23/485;H01L23/50;H01L29/41 主分类号 H01L23/52
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