| 摘要 |
PURPOSE:To enhance the reliability by reducing the change of temperature of the clip voltage for a voltage clipping diode. CONSTITUTION:An n<-> type collector region 2 and a p type base region 3 common to transistors for Darlington connection are formed on an n<+> type collector region 1. The region 3 contacts the region 2, besides the region 2 reaches the surface by projecting to the base part of the region 3, and an n<+> type region 4a is formed on the surface thereof. The isolated regions 3 are connected by a metallic electrode 7a. Even when the resistance has temperature dependence and the variation of logical breakdown values, the increase of resistance is proportional to that of the width of a depletion layer; therefore the change of temperature of withstand voltage is restrained. |
