| 摘要 |
PURPOSE:To easily perform the wire bonding using an Au wire by a method wherein the diffusion into the Au layer of AuGe and GaAs is inhibited using a transition metal Mo or W. CONSTITUTION:An N layer 2 is formed on a semiinsulating GaAs substrate 1 by peforming an Si ion implantation. Then on the N layer 3, an AuGe layer 3 as the first layer, an Mo layer 4 as the second layer, and an Au layer 5 as the third layer are continuously vapor-deposited under high vacuum. A heat treatment is perfomed on the GaAs substrate 1 obtained as above in an electric furnace having a hydrogen gas atmosphere. According to this constitution, an ohmic electrode can be obtained using an AuGe alloy of the first layer, the diffusion into the third layer Au of the Ga, As and Ge generated from the first layer of Au and GaAs substrate can be suppressed using the Mo of the second layer, and the wire bonding of an Au wiring can also be performed using the Au wire of the third layer. |
