| 摘要 |
PURPOSE:To prevent the occurrence of double selection, by making the current amplification rate of a transistor TR, which is turned on and off in accordance with selection and non-selection of a word line, lower. CONSTITUTION:Word lines are a pair of word line, and a word line W+ is connected to a word driver, and this word line is set to the selection state when it becomes H-level in accordance with an input address. At this time, when a pair of bit lines BL and -BL are driven, a static memory cell at the intersection between them is accessed. When the memory cell MC is accessed, the potential of the word line W+ rises to the H level, and this rise to the H level is transmitted to the base of the second TRT2 through the first TRT1 to turn on the TRT2. In this case, if a current amplification rate beta of the first TRT1 is made lower, more base current is required for pulling out a certain emitter current from the TRT1. Consequently, floating of the waveform due to the electric charge overflowed from the memory cell MC to the word line W+ is suppressed to prevent double selection. |
