| 摘要 |
PURPOSE:To prevent the irregularity of a grown layer by a method wherein a pressure controlling mechanism, which controls the pressure in a reaction furnace in a constant state by detecting the fluctuation of pressure in a vapor-phase growing device, is provided. CONSTITUTION:A semiconductor substrate 3 is placed on the susceptor 2 located in a bell jar furnace, and a coil 5 is provided below the susceptor. A current is applied to the coil from a high frequency power source 6, and the semiconductor substrate 3 is heated up through the intermediary of the susceptor 2. Then, gas containing a film forming substance is supplied through a piping A, and exhaust gas is exhausted to the main duct 10 through an exhaust duct 9. As the static pressure of the main duct 10 fluctuates due to the influence received from other devices, the static pressure in the bell jar fluctuates too. In order to prevent the above fluctuation, a pressure gauge 9 with which the pressure inside the bell jar 1 will be detected is provided, the damper 8 provided in the duct 9 is controlled by the output of the pressure gauge 7, and the degree of opening of the exhaust duct 9 is controlled properly. |
