| 摘要 |
PURPOSE:To reduce wafer cracks and damage by simultaneously performing the process of providing a V-shape groove for wafer splitting in the surface of a chip without processes of scribing and dicing and the process of thinning the thickness by etching the surface of the wafer. CONSTITUTION:After forming a pattern on a GaAs substrate 21, said substrate is covered with a protection film 22. Next, the protection film 22 at the part of an aperture 24 formed through a photo resist film 23 is removed. The resist pattern 26 to provide the aperture for a bonding pad 25 is formed on the remnant protection film 22'. Then, the V-shape groove 28 is dug. Successively, the apertures 27' for the bonding pads 25 are provided through the protection film 22' by utilizing the apertures 27 of the resist 26. At this time, an overhang part 24'' at the aperture 24' of the protection film 22' is also etched at the same time. |
