发明名称 DYNAMIC RAM
摘要 PURPOSE:To attain highly accurate control by utilizing a dummy word line so as to simulate the level increase at the remotest end of the word line thereby discriminating an optimum level so as to start a word line bootstrap circuit. CONSTITUTION:External address signals AX0-AXn are fetched to an address buffer ADB in synchronizing with a timing signal phiar formed by a row address strobe signal RAS and fed to a row decoder R-DCR and also the selecting operation of the prescribed word line and dummy word line is attained by using a word line selection timing signal phix. This timing signal phix is inputted to the boostrap circuit phix-B so as to boost the potential of the selected word line WL to a voltage over power supply voltage Vcc. Further, external address signals AY0-AYn are fetched to an address buffer ADB in synchronizing with a timing signal phiac formed by a column address strobe signal CAS, fed to a column decoder C-DCR and the data line is selected by a data line selection timing signal phiy.
申请公布号 JPS59185090(A) 申请公布日期 1984.10.20
申请号 JP19830055085 申请日期 1983.04.01
申请人 HITACHI SEISAKUSHO KK 发明人 SATOU KATSUYUKI
分类号 G11C11/407;G11C11/34;G11C11/401;G11C11/409;(IPC1-7):G11C11/34 主分类号 G11C11/407
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