| 摘要 |
In this structure for making potential-free thermal contact to a semiconductor component (1), in particular a power thyristor or a power diode, using a heat sink (5, 9), a laminate (4, 8) is provided as electrical insulating layer. The laminate (4, 8) is composed of an aluminium oxide fibre braiding impregnated with an adhesive, preferably an adhesive containing 60 % aluminium oxide filler in powdered form. The laminate (4, 8) combines high electrical insulating capacity with good thermal and mechanical properties. In particular, it is very resistant to pressure and permits high contact forces between semiconductor component (1) and heat sink (5, 9) in order to produce a good electrical contact between metal terminal plates (2, 6) of the semiconductor component (1) and conductor rails (3, 7) used for interconnection. <IMAGE>
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