发明名称 GATE DRIVING CIRCUIT OF GATE TURN-OFF THYRISTOR
摘要 PURPOSE:To shorten the turn-off time of an SCR and to reduce the gate-cathode current to suppress the heating of the SCR by applying the reverse bias of a high level and then the reverse bias of a low level when the gate turn-off (GTO) SCR is turned off. CONSTITUTION:Rectifying diodes 12 and 13 are connected to a power supply 20 via a pulse transformer 11, and the DC voltage is applied to a capacitor 18 from the supply 20. The capacitor 18 and a transistor TR16 are connected in series between the gate and the cathode of a GTOSCR19. At the same time, an insulated element 14 for signal transmission is connected to the gate of the TR16 via a monostable circuit 15 to supply the drive signal. Furthermore a Zener diode 17 is connected in parallel to the circuit 15. Then the reverse bias of a high level is applied when the SCR19 is turned off, and the TR16 is actuated at a fixed level of voltage after a prescribed period of time. Then the voltage of a low level is applied to the gate of the SCR19. Thus the turn-off time of the SCR is shorten and therefore the gate-cathode current is reduced.
申请公布号 JPS60115(A) 申请公布日期 1985.01.05
申请号 JP19830107415 申请日期 1983.06.15
申请人 FUJI DENKI SEIZO KK 发明人 HASHIMA KESAO
分类号 H02M1/06;H03K17/723;H03K17/732;H03K17/79 主分类号 H02M1/06
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