| 摘要 |
PURPOSE:To obtain an ohmic electrode, which has low contact resistance, the smoothness of the surface thereof is excellent and which has superior adhesive properties to an insulating film, by forming laminated structure by using Si or a Si-Ge alloy as a first layer on a semiconductor base body, a metal having the high melting point or metallic ceramics as a second layer and a metal having high electric conductivity as a third layer. CONSTITUTION:A source 2, a drain 3 and a channel section 4 are formed to a GaAs substrate 1 through the implantation method of Si ions. When the source 2 and the drain 3 are formed through the ion implantation method, a self-alignment type is obtained when a gate electrode 5 such as W is used previously as a mask. Si is applied to first layers 8 in 300Angstrom thickness, WSi2 to second layers 9 in 1,000Angstrom one and Au to third layers 10 in 1,000Angstrom one through a sputtering evaporation method as source and drain electrodes 6, 7, and excellent ohmic characteristics having approximately 10<-6>OMEGA.cm<2> resistivity are obtained through heat treatment for thirty min in a hydrogen atmosphere at 800 deg.C. |
