| 摘要 |
PURPOSE:To simplify a manufacturing process without lowering electrical characteristics and yield on manufacture by simultaneously progressing a diffusion for forming first and second P type regions in a molding process for an epitaxial growth layer, a heating oxidizing treating process and a heat-treating process for shaping a base region. CONSTITUTION:N type buried layers 3 are formed through a diffusion process while using Sb glass layers 2 selectively applied on the surface of a P type Si substrate 1 as diffusion sources. Spin-ON glass layers 2 used as diffusion sources for forming the buried layers 3 or masks in an ion implantation process are removed, and an epitaxial growth layer 4 is formed. A silicon oxide film 9 is shaped through a heating oxidizing treating process. A P type impurity 21 introduced near the buried layers 3 diffuses toward the inside of the silicon substrate 1 and the surface of the growth layer 4 at that time, and first P type regions 22 are formed. Second P type regions 24, bottoms thereof are deeper than the top sections of the first P type regions 22, are shaped from the surface of the growth layer 4. Since the first and second P type regions 22 and 24 are of the same conduction type, both are unified, and isolations 8 are formed. |
