| 摘要 |
PURPOSE:To increase the plasma density in a vacuum vessel at low power assuring high etching rate without supplying the vacuum vessel with high frequency power by a method wherein the preliminarily led-in gas in activated by means of irradiating microwave. CONSTITUTION:A microwave oscillator 10 made of magnetron and a waveguide 11 are provided on the specified position of the channel of a pipe 6 leading gas into a vacuum vessel 1. Multiple specimens 8 with selectively formed resist mask film are placed on a silicon substrate on a lower electrode 3 and the vacuum vessel 1 is vacuumed from an exhaust pipe 7 up to approximate 0.1Torr of vacuum degree by leading activated reaction gas from the gas lead-in pipe to the vacuum vessel 1 while activating the microwave oscillator 10. Next the specimens 8 on the lower electrode 3 may be specifically etched by DC bias while improving the specimens 8 with high frequency power from a high frequency power supply 4. |
