| 摘要 |
PURPOSE:To alleviate inplane distortion and reduce dispersion of pitch by forming the predetermined pattern after partly eliminating a film formed on a semiconductor substrate. CONSTITUTION:A deposition film 2 such as nitride film, phoshor glass film, aluminium deposition film is formed by the CVD technique to the front surface or front and rear surfaces of wafer 1 consisting of silicon substrate. In this condition, the wafer 1 is curved by distortion. Next, a photo resist 3 is applied to the area except for the scribe area of the deposition film 2 at the front side. Thereafter, the scribe area of deposition film 2 is eliminated by the photo sensitive developing processing and dry or wet etching and finally the photo resist 3 is removed. |
