| 摘要 |
PURPOSE:To manufacture the titled device having a common gate electrode structure of high speed and high reliability by a method wherein a gate electrode is formed of a sufficiently low resistant material, and the film quality of the second gate insulation film formed on the surface of this gate electrode is thus improved. CONSTITUTION:Since the gate electrode 14 is formed of molybdenum, the speed- up of a CMOS of common gate structure can be attained by the decrease in resistance of the electrode 14. An Mo oxide film 17 formed on the surface of the electrode 14 is changed into an Si oxide film by heat treatment in a hydrogen atmosphere after deposition of a polycrystalline Si film 18, thus forming the second gate oxide film 19; therefore the film quality of this film 19 is excellent to the same degree as that of the polycrystalline Si oxide film, causing no problems such as the deterioration of withstand voltage. Accordingly, the CMOS of common gate structure can be increased in performance. |
