发明名称 SCHALTUNGSANORDNUNG FUER EINE POTENTIALGETRENNTE ANSTEUERUNG WENIGSTENS EINES FELDEFFEKTTRANSISTORS
摘要 A circuit arrangement for the potential-isolated driving of at least one field-effect transistor (4) in switching mode by means of a transformer (1) is described to the primary side and secondary side of which in each case a driver circuit (2, 3) is connected, the secondary-side driver circuit (3) only being supplied with voltage from the secondary voltage of the transformer (1), and the output of the secondary-side driver circuit (3) being connected to the control input of the field-effect transistor (4). To achieve an optimum switching characteristic of the field-effect transistor, the secondary-side driver circuit (3) for driving the field-effect transistor (4) with pulses is a push-pull stage (13, 14; 37, 38), preferably a complementary push-pull stage, the feed voltage terminals of which are connected via a rectifier circuit (9, 10, 11, 12) to the secondary side of the transformer (1), the rectifier circuit supplying positive and negative operating voltages with respect to the reference potential of the field-effect transistor (4), for example the source potential, so that positive and negative control voltages are present at the control electrode of the field-effect transistor (4), for example the gate electrode (G). <IMAGE>
申请公布号 AT377138(B) 申请公布日期 1985.02.11
申请号 AT19810005103 申请日期 1981.11.26
申请人 ZUMTOBEL AKTIENGESELLSCHAFT 发明人 DUM HERMAN DIPL.ING.;PICHLER HEINRICH DIPL.ING. DR.TECHN.;NEIER JOHANNES DIPL.ING.;JAGSCHITZ OTTO DIPL.ING.
分类号 H03K17/042;H03K17/66;H03K17/691 主分类号 H03K17/042
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