Method of forming deep aluminum doped silicon by implanting Al and Si ions through alumina layer and device formed thereby

摘要

In a method of producing a semiconductor device, an alumina layer is formed directly on a principal surface of a silicon substrate; aluminum and silicon are ion-implanted through the alumina layer into said substrate; and the substrate is thereafter annealed. The ion-implanted silicon yields better crystalline structure and increases the solid solubility limit of aluminum.