| 摘要 |
PURPOSE:To realize high output by enabling the lamination of an active layer while keeping a low threshold value and the basic lateral mode oscillation by a method wherein an internal stripe type laser is constructed on a substrate having a mesa. CONSTITUTION:The mesa is formed on the P type GaAs substrate 1, an N type GaAs current stricture layer 2 being grown by the liquid phase epitaxial method, and a groove being then formed in the surface. A P type Ga0.57Al0.43As clad layer 3, a non-doped Ga0.92Al0.08As active layer 4, an N type Ga0.57Al0.43As clad layer 5, and an N type GaAs cap layer 6 are successively grown by the liquid phase epitaxial method, and N-side and P-side ohmic contact electrodes 7 and 8 are formed. Since the growth in the upper part of the mesa is more inhibited than that of its skirt on account of the anisotropy of crystal growth, an extremely thin active layer 4 can be formed in the upper part of the mesa with good reproducibility. |
