摘要 |
PURPOSE:To adjust the quantity of a gas for a reaction being in contact with a mixed crystal growth substance by changing a space between a cover body mounted to a receiving vessel receiving a mixed crystal growth substance source and an upper opening surface. CONSTITUTION:K on an upper opening surface in a receiving vessel 2 receiving gallium 3 as a mixed crystal growth substance source and a plate-shaped cover body 10 having approximately the same area as the upper opening surface are mounted at a regular interval, and the cover body 10 can be turned vertically by a driving bar 11. A space between the vessel 2 and the cover body 10 is changed by turning the cover body 10 by the driving bar 11 from the outside, and the efficiency of a reaction between HCl formed by the reaction of AsCl3 and Ga in the receiving vessel 2 is controlled. |