发明名称 VAPOR-PHASE EPITAXIAL GROWTH DEVICE
摘要 PURPOSE:To adjust the quantity of a gas for a reaction being in contact with a mixed crystal growth substance by changing a space between a cover body mounted to a receiving vessel receiving a mixed crystal growth substance source and an upper opening surface. CONSTITUTION:K on an upper opening surface in a receiving vessel 2 receiving gallium 3 as a mixed crystal growth substance source and a plate-shaped cover body 10 having approximately the same area as the upper opening surface are mounted at a regular interval, and the cover body 10 can be turned vertically by a driving bar 11. A space between the vessel 2 and the cover body 10 is changed by turning the cover body 10 by the driving bar 11 from the outside, and the efficiency of a reaction between HCl formed by the reaction of AsCl3 and Ga in the receiving vessel 2 is controlled.
申请公布号 JPS60137013(A) 申请公布日期 1985.07.20
申请号 JP19830249063 申请日期 1983.12.26
申请人 MITSUBISHI DENKI KK 发明人 ITOU MICHIHIRO
分类号 H01L21/205;(IPC1-7):H01L21/205 主分类号 H01L21/205
代理机构 代理人
主权项
地址