发明名称 |
Heterojunction semiconductor |
摘要 |
A heterojunction semiconductor is provided where the carrier transport dimension is governed by a layer thickness and where the characteristics of the materials self-limit process steps. A field effect transistor is provided wherein the work function is matched across regions to reduce limits on the channel dimension. A vertical transistor is provided wherein a vertical web is formed with precise thickness governed by electrolytic etching using photogenerated carrier current.
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申请公布号 |
US4550489(A) |
申请公布日期 |
1985.11.05 |
申请号 |
US19830557015 |
申请日期 |
1983.12.01 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHAPPELL, BARBARA A.;CHAPPELL, TERRY I.;WOODALL, JERRY M. |
分类号 |
H01L21/28;H01L21/3063;H01L29/205;H01L29/267;H01L29/36;(IPC1-7):H01L29/80;H01L29/06;H01L29/161;H01L29/48 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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