| 摘要 |
PURPOSE:To improve the dielectric breakdown withstand voltage while increasing the allowance of mounting design by a method wherein an exposed part of header per mold type is covered with insulating resin. CONSTITUTION:A chip 9 is initially fixed on a chip fixing region 10 of a leadframe 4. Firstly, electrodes of chip 9 are connected to respective leads 2. Then a header 8 in the state of floating in cavity is molded to form a rectangular package 1. Resultantly, fine holes 15 are made on the parts corresponding to the parts where level specifying pieces 12 of package 1 are located while said pieces 12 connecting to the header 8 are exposed to the bottom of fine holes 15. Secondly, said holes 15 are filled with insulator 16 to cover the header 8 completely with the package 1 and the insulator 16. Finally a frame part 5 of lead frame 4 and dam pieces 6 are cut and removed to produce a transistor. |
