| 摘要 |
<p>A solid-state image sensor having a plurality of unit cells, each of which comprises a photosensitive area (24, 25) and a CCD register (23) for the transfer of a signal charge generated in said photosensitive area (24, 25), both said photosensitive area (24, 25) and said CCD register (23) are disposed on a layer (22), having a different polarity from the charging polarity of said signal charge, which is disposed on a substrate (21) having the same polarity as said signal charge.</p> |
