发明名称 |
High rate, low temperature silicon deposition system |
摘要 |
A radio frequency, plasma-enhanced, vapor deposition reactor has apparatus (3-7) for providing a flow of silane in an inert gas carrier, a deposition chamber (20) formed between a pair of flow restrictors (18, 27) and an RF coil (22) for providing inductive coupling of RF power (24) for plasma excitation, disposed downstream of a fixture (8) for holding the substrate upon which amorphous silicon is to be disposed. A baffle (30) provides diversion of the gas flow toward a gravity trap chamber (31), thereby collecting some particulates and prolonging the cycle time before plugging of the vacuum pump (7) can occur.
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申请公布号 |
US4583492(A) |
申请公布日期 |
1986.04.22 |
申请号 |
US19830562625 |
申请日期 |
1983.12.19 |
申请人 |
UNITED TECHNOLOGIES CORPORATION |
发明人 |
COWHER, MELVYN E.;SHUSKUS, ALEXANDER J. |
分类号 |
C23C16/507;H01J37/32;(IPC1-7):C23C16/50 |
主分类号 |
C23C16/507 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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