| 发明名称 |
Semiconductor device. |
| 摘要 |
<p>Provided is a power semiconductor device operable to be switched at high frequencies.</p><p>The semiconductor device according to the present invention is applied to a three-terminal BIMOS power semiconductor device in which a MOS-FET (2) is connected in parallel with a bipolar transistor (3) while the gate of the MOS-FET (2) is connected with the base of the bipolar transistor (3) through a reference-voltage diode (6) and a fast switching diode (7) so that the operation of the semiconductor device can be controlled by one driving circuit (1).</p> |
| 申请公布号 |
EP0181148(A1) |
申请公布日期 |
1986.05.14 |
| 申请号 |
EP19850307857 |
申请日期 |
1985.10.30 |
| 申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
MAJUMDAR, GOURAB MITSUBISHI DENKI K.K.;MORI, SATOSHI MITSUBISHI DENKI K.K. |
| 分类号 |
H03K17/04;H03K17/0422;H03K17/567;H03K17/60;(IPC1-7):H03K17/56 |
主分类号 |
H03K17/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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