| 摘要 |
PURPOSE:To satisfy high etching rate, high etching selection ration and preferable etching shape by supplying He at 800SCCM or higher when etching an alloy film which mainly contains aluminum by plasma of chlorine gas. CONSTITUTION:When a member 10 to be etched and coated with an alloy film which mainly contains aluminum or aluminum alloy is etched on the surface by a plasma of chlorine gas in a vacuum chamber 1, He is supplied at 800SCCM or higher into the chamber by a gas intake tube 4. If the supply amount is less than 800SCCM, cooling effect of He is not sufficient, and the deterioration of the resist cannot be effectively suppressed. |
