| 摘要 |
PURPOSE:To enable to speed up the cutting by fusing of a fuse by a method wherein, in the semiconductor integrated circuit device having a fuse element, current concentration is generated by bending the center of the fuse element. CONSTITUTION:In the semiconductor integrated circuit element having a fuse element 3 between semiconductor layers 1 and 1, the fuse element 3 is formed by bending it at two place. As result, the current running on the fuse element is concentrated at the bent parts. As a result a local heating is generated at the above-mentioned bent parts, thereby enabling to perform the cutting of fuse by fusing quickly. |
