| 摘要 |
PURPOSE:To remove a stepped section in size of approximately several mum from a shape under an Al wiring, and to avoid possibility of which the Al wiring is disconnected at the stepped section by forming a hole with a smooth inclined plane when a diffusion resistor in a substrate and the Al wiring are connected. CONSTITUTION:A diaphragm, thickness thereof is prescribed, is formed by a single crystal substrate 1n<-> silicon epitaxial growth layer 7 and insulating film SiO2 4 in an etching stopping layer 9 shaped into an n<-> type silicon single crystal substrate 1, a p<-> type diffusion resistor 3 and a diffusion lead section 6 are formed just under the n<-> silicon epitaxial growth layer, and the diffusion lead section 6 and an Al wiring layer 5 are connected through a hole 8 for connection with a smooth inclined plane bored to the silicon epitaxial growth layer 7, thus constituting a pressure sensor. Consequently, a stepped section is inhibited only by 1mum shaped by a hole bored to the insulating film 4. Accord ingly, possibility of which the Al wiring is disconnected in the section is reduced remarkably. |
