| 摘要 |
PURPOSE:To form wirings consisting of polysilicon so as not to generate disconnections by removing a stepped section between polysilicon as floating gates before polysilicon as a control gate is applied. CONSTITUTION:A gate oxide film 11 and polysilicon 12 are shaped, an silicon nitride film 12 is grown, and a section 15 as a section between floating gates is removed selectively by a photosensitive resin to expose the polysilicon 12. The polysilicon is removed up to its midway, said polysilicon is oxidized, and the silicon nitride film is removed, thus isolating the polysilicon 12 by the oxide film 15. When the polysilicon 12 is oxidized, a polysilicon film 17 can be formed onto an approximately flat oxide film 16. |
