| 摘要 |
PURPOSE:To obtain high acceptance potential by forming an electrostatic charge blocking layer made of amorphous silicon higher in the energy gap than an amorphous silicon photosensitive layer. CONSTITUTION:The charge blocking layer 41 formed on a substrate drum 12, in a thickness of 8-30mum, evacuating the inside of a vessel 13 to a vacuum of 10<-6>torr, heating the drum 12 to 200-300 deg.C, opening valves 19, 20, 23, 27, 28 to introduce a gas mixture of diborane, disilane, and silane gases from each cylinder 22, 26, 30 into the vessel 13, and applying high frequency voltage between an electrode 16 and the drum 12 to cause glow discharge. Then, the amorphous silicon photosensitive layer 42 is formed in a thickness of 8-30mum on this layer 41 from silane, thus permitting the charge blocking layer 41 enhanced in the energy band by using the silane type gas mixture contg. disilane to be formed on the conductive substrate 12, and hence to effectively prevent injection of charge from the conductive substrate 12. |
