| 摘要 |
A film of an element is deposited on a semiconductor substrate by passing on the substrate gas containing the element and then irradiating a predetermined portion of the substrate with an electron beam. Then, the gas is decomposed to deposit the element on the substrate so as to form a pattern. By heating the pattern, the element is diffused into the surface of the substrate thus forming a diffused region. The gas is generated by sublimating solid Cr(C6H6)2, Mo(C6H6)2, Mo(C6H6)2, Al(CH3)3, WCl6 etc.
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