发明名称 Maskless growth of patterned films
摘要 PCT No. PCT/US82/00745 Sec. 371 Date Jul. 19, 1982 Sec. 102(e) Date Jul. 19, 1982 PCT Filed Jun. 1, 1982 PCT Pub. No. WO83/04269 PCT Pub. Date Dec. 8, 1983.A method of growing patterned films on a substrate in a deposition chamber without masking, the method consisting of the following steps: pressurizing the chamber with a fluid medium to form a thin absorption layer on the substrate; evacuating the chamber to remove excess fluid medium; prenucleating portions of the substrate with a focused energy beam; repressurizing the chamber with a fluid medium; and inducing deposition of material from the fluid medium and thereby growing a patterned film with deposition occurring primarily on the prenucleated portions of the substrate.
申请公布号 US4608117(A) 申请公布日期 1986.08.26
申请号 US19820403752 申请日期 1982.07.19
申请人 MASSACHUSETTS INSTITUTE OF TECHNOLOGY 发明人 EHRLICH, DANIEL J.;DEUTSCH, THOMAS F.;OSGOOD, RICHARD M.;SCHLOSSBERG, HOWARD
分类号 C23C16/04;C23C16/48;H01L21/268;(IPC1-7):C30B25/02 主分类号 C23C16/04
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