发明名称 |
Maskless growth of patterned films |
摘要 |
PCT No. PCT/US82/00745 Sec. 371 Date Jul. 19, 1982 Sec. 102(e) Date Jul. 19, 1982 PCT Filed Jun. 1, 1982 PCT Pub. No. WO83/04269 PCT Pub. Date Dec. 8, 1983.A method of growing patterned films on a substrate in a deposition chamber without masking, the method consisting of the following steps: pressurizing the chamber with a fluid medium to form a thin absorption layer on the substrate; evacuating the chamber to remove excess fluid medium; prenucleating portions of the substrate with a focused energy beam; repressurizing the chamber with a fluid medium; and inducing deposition of material from the fluid medium and thereby growing a patterned film with deposition occurring primarily on the prenucleated portions of the substrate.
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申请公布号 |
US4608117(A) |
申请公布日期 |
1986.08.26 |
申请号 |
US19820403752 |
申请日期 |
1982.07.19 |
申请人 |
MASSACHUSETTS INSTITUTE OF TECHNOLOGY |
发明人 |
EHRLICH, DANIEL J.;DEUTSCH, THOMAS F.;OSGOOD, RICHARD M.;SCHLOSSBERG, HOWARD |
分类号 |
C23C16/04;C23C16/48;H01L21/268;(IPC1-7):C30B25/02 |
主分类号 |
C23C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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