| 摘要 |
A laser beam 18 is used to directly draw lines in a refractory metal of a micrometre in size, at a speed of several centimetres per second on silicon surfaces 15. Metal lines made of tungsten 11, 12 are deposited selectively on the silicon surface by relying on the method of laser-induced vapour phase deposition. It is possible to obtain, on the silicon surface, regular lines several centimetres long and 2 to 15 micrometres wide by using an argon laser beam with a focused spot diameter of about 20 micrometres. The present method is more particularly useful in the fabrication of individualised integrated circuits, in the positioning of conductors as required in integrated circuits, in the correction of masks and in the correction of defects in large-scale integrated circuits and in liquid crystal display devices. <IMAGE>
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