| 摘要 |
PURPOSE:To prevent a semiconductor device from having improper dielectric strength due to the displacement of an epitaxial layer by forming an element such as a transistor on an insular region surrounded by a separating SiO2 film. CONSTITUTION:A separating region 3 made of an SiO2 film is formed on the surface of a p<-> type Si substrate on which an Si3N4 film 2 is not formed. A mask 4 is formed except the film 2, and Sb is ion implanted to form an n<+> type buried layer 5. An n-type Si layer 6 is epitaxially grown on the entire surface. With newly formed Si3N4 film 8 as a mask a separating region 9 made of an SiO2 film is formed to connect with the region 3. Simultaneously, a separating region 10 is formed. An npn transistor is formed on one insular region, and a resistance n-type layer 14 and a resistance electrode leading n<+> type layer 15 is formed on other one insular region. A transistor and resistance wirings 17 are formed on a surface SiO2 film 16. Since the buried separating region is formed in this configuration, a decrease in its dielectric strength (BVBSO leakage) does not occur.
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