| 发明名称 | Storage device and storage unit | ||
| 摘要 | A storage device includes: a first electrode; a storage layer including an ion source layer; and a second electrode. The first electrode, the storage layer, and the second electrode are provided in this order. The ion source layer includes a chalcogen element, oxygen, and one or more transition metal elements selected from the group of Groups 4, 5, and 6 elements of the Periodic Table. | ||
| 申请公布号 | US9466791(B2) | 申请公布日期 | 2016.10.11 |
| 申请号 | US201313848996 | 申请日期 | 2013.03.22 |
| 申请人 | Sony Corporation | 发明人 | Sei Hiroaki;Ohba Kazuhiro;Sone Takeyuki;Ikarashi Minoru |
| 分类号 | H01L45/00;G11C13/00;H01L27/24 | 主分类号 | H01L45/00 |
| 代理机构 | Chip Law Group | 代理人 | Chip Law Group |
| 主权项 | 1. A storage device, comprising: a first electrode; a storage layer including an ion source layer and a resistance change layer; and a second electrode, the first electrode, the storage layer, and the second electrode being provided in this order, wherein the ion source layer includes a chalcogen element, oxygen, and one or more metal elements selected only from the group consisting of Groups 4, 5, and 6 elements of the Periodic Table, and wherein the ion source layer which provides metal ions to the resistance change layer does not include metal elements selected from groups other than Group 4, 5, and 6 elements of the Periodic Table. | ||
| 地址 | Tokyo JP | ||