Semiconductor device and method of manufacturing the same

摘要

A semiconductor device according to one embodiment includes an n-type first GaN-based semiconductor layer, a p-type second GaN-based semiconductor layer on the first GaN-based semiconductor layer. The second GaN-based semiconductor layer includes a low impurity concentration region and a high impurity concentration region. An n-type third GaN-based semiconductor layer is provided on the second GaN-based semiconductor layer. The device includes a gate electrode being located adjacent to the third GaN-based semiconductor layer, the low impurity concentration region, and the first GaN-based semiconductor layer intervening a gate insulating film. The device includes a first electrode on the third GaN-based semiconductor layer, a second electrode on the high impurity concentration region, and a third electrode on the opposite side of the first GaN-based semiconductor layer from the second GaN-based semiconductor layer.

主权项

1. A semiconductor device comprising:
an n-type first GaN-based semiconductor layer; a p-type second GaN-based semiconductor layer provided on the first GaN-based semiconductor layer, the p-type second GaN-based semiconductor layer including a first region and a second region, the first region provided between the second region and the first GaN-based semiconductor layer, impurity concentration of the second region being higher than that of the first region; an n-type third GaN-based semiconductor layer provided on the first region; a gate electrode having one end thereof located at the third GaN-based semiconductor layer or in a higher position than the third GaN-based semiconductor layer and the other end thereof located in the first GaN-based semiconductor layer, the gate electrode being located adjacent to the third GaN-based semiconductor layer, the first region, and the first GaN-based semiconductor layer intervening a gate insulating film; a first electrode provided on the third GaN-based semiconductor layer; a second electrode provided on the second region, the second electrode being a different material from the first electrode; and a third electrode electrically connected to the first GaN-based semiconductor layer.