Selective growth for high-aspect ration metal fill

摘要

An improved conductive feature for a semiconductor device and a technique for forming the feature are provided. In an exemplary embodiment, the semiconductor device includes a substrate having a gate structure formed thereupon. The gate structure includes a gate dielectric layer disposed on the substrate, a growth control material disposed on a side surface of the gate structure, and a gate electrode fill material disposed on the growth control material. The gate electrode fill material is also disposed on a bottom surface of the gate structure that is free of the growth control material. In some such embodiments, the gate electrode fill material contacts a first surface and a second surface that are different in composition.

主权项

1. A method comprising:
receiving a substrate having a gate structure disposed thereupon, wherein the gate structure includes a sacrificial portion; removing the sacrificial portion to define a trench within the gate structure, wherein the trench has opposing side surfaces and a bottom surface defined thereupon; selectively forming a material layer on the opposing side surfaces, wherein the bottom surface is free of the material layer; and depositing a fill material of a gate electrode on the material layer and on the bottom surface within the trench.