| 摘要 |
Certain Tm-containing iron garnet compositions provide layers having desirably high values of Curie temperature and magnetic anisotropy and permit the fabrication of devices having 1.2 mu m diameter magnetic bubbles. The compositions, based on Tm-substitution on dodecahedral sites of [(La,Bi)(Sm,Eu),(Ca,Sr),R]3(Fe,Si,Ge)5O12, are grown by liquid phase epitaxy onto suitable substrates. Bubble devices that incorporate the layers find applications in high density information storage. |
