| 摘要 |
PURPOSE:To form films having uniform quality by vapor deposition on the surfaces of plural drums to a uniform thickness by disposing the drum cans between two sheets of flat plate electrodes and passing a gaseous raw material from one electrode plate toward the other electrode plate in the stage of forming the films by a plasma CVD method on the surfaces of said drums. CONSTITUTION:Plural pieces of the Al drums 15 heated to a prescribed temp. in a heating chamber are put into a plasma CVD reaction chamber. The inside of the chamber is evacuated and the flat plate electrodes 22, 25 disposed on both sides of the array of the drums 15 are connected to the negative electrode of a high-frequency power source. The drum cans are grounded as a positive electrode with respect to the electrodes 22, 25. The gaseous raw material such as silane is ejected from many gas holes 23 provided to one electrode plate 22 and is passed on the outside surface of the drums 15 without stagnation. The gas is taken into the intake ports 27 of gas discharge pipes 26 provided in the upper and lower parts of the counter electrode 25. The silane is decomposed in this state by the plasma between drums 15 and the plates 22, 25. The amorphous Si films having uniform quality and uniform thickness are deposited by evaporation on the surfaces of the drums 15. |
