| 摘要 |
<p>A low temperature method of controlling the drain current drift and enhancing the channel mobility in InP-MISFETs by saturating an InP substrate surface with phosphorous and subsequently forming a phosphorous rich native oxide. This is followed by in-situ formation of a gate insulator layer on the phosphorous rich native oxide. The phosphorous rich native oxide is formed at a low temperature in the range of 200°C - 300°C using an isolated plasma enhanced chemical vapor deposition.</p> |
