| 摘要 |
A solar cell having a high conversion efficiency and good controllability and stability in the formation of a p-n junction in the solar-cell element consists of a layer of gallium arsenide of the n type, which layer is connected to an electrode, and a layer of gallium arsenide of the p type, which layer is formed on a principal plane of the n-type gallium arsenide, in order to form a p-n junction and which contains therein magnesium as a p-type dopant and to which the other electrode is connected. A method for fabricating a gallium arsenide solar cell of the above described structure involves the following steps: forming an epitaxial layer of the p-type on an n-type gallium arsenide substrate by bringing the latter into contact with a molten crystal liquid which is a solution consisting of gallium and containing aluminium gallium arsenide in a saturated state, gallium arsenide and aluminium, and forming a p-n junction by inverting the conductivity type of a portion of the n-type gallium arsenide substrate which touches the epitaxial layer, to produce p-type conductivity.
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