发明名称 Substrate processing apparatus
摘要 A substrate processing apparatus includes: a process chamber configured to process a substrate; a substrate mounting stand installed in the process chamber and configured to hold the substrate; a heating part configured to heat the substrate; a gas rectifying part configured to supply a process gas to the substrate; a sealing part installed in the gas rectifying part; a heat insulating part installed between the sealing part and an upstream side surface of the gas rectifying part; and a first pressure adjusting part connected to the heat insulating part.
申请公布号 US9487863(B2) 申请公布日期 2016.11.08
申请号 US201514810996 申请日期 2015.07.28
申请人 HITACHI KOKUSAI ELECTRIC INC. 发明人 Matsui Shun;Morimitsu Kazuhiro;Toyoda Kazuyuki
分类号 C23C16/50;C23C16/46;C23C16/52;C23C16/458;C23C16/455;C23C16/44 主分类号 C23C16/50
代理机构 Volpe and Koenig, P.C. 代理人 Volpe and Koenig, P.C.
主权项 1. A substrate processing apparatus comprising: a process chamber configured to process a substrate; a substrate mounting stand installed in the process chamber and configured to hold the substrate; a heating part configured to heat the substrate embedded on the mounting stand; a gas rectifying part facing the process chamber and installed in an upper portion of the process chamber, and configured to supply a process gas to the substrate; a sealing part installed between the gas rectifying part and a gas introduction part; a heat insulating part installed between the sealing part and an upstream side surface, which faces the processing chamber, and located inside of the gas rectifying part, and having an annular groove shape, an inside of the annular grove shape heat insulating part configured to be vacuum exhausted; a first pressure adjusting part connected to the heat insulating part, and configured to maintain a pressure inside the heat insulating part at a first predetermined pressure; and a control part configured to control the first pressure adjusting part.
地址 Tokyo JP