| 发明名称 |
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF |
| 摘要 |
A semiconductor structure includes a semiconductor substrate, at least one dielectric layer, a dielectric spacer liner (DSL) layer, and at least one conductor. The dielectric layer is present on the semiconductor substrate. The dielectric layer has at least one contact hole exposing at least a portion of the semiconductor substrate. The semiconductor substrate has at least one recess communicating with the contact hole. The recess has a bottom surface and at least one sidewall. The DSL layer is present on at least the sidewall of the recess. The conductor is present at least partially in the contact hole and is electrically connected to the semiconductor substrate. |
| 申请公布号 |
US2016336412(A1) |
申请公布日期 |
2016.11.17 |
| 申请号 |
US201514842680 |
申请日期 |
2015.09.01 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
HUNG Chi-Cheng;CHEN Kei-Wei;WANG Yu-Sheng;CHUNG Ming-Ching;WU Chia-Yang |
| 分类号 |
H01L29/417;H01L21/768;H01L29/66;H01L29/78 |
主分类号 |
H01L29/417 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor structure, comprising:
a semiconductor substrate; at least one dielectric layer present on the semiconductor substrate, the dielectric layer having at least one contact hole exposing at least a portion of the semiconductor substrate, wherein the semiconductor substrate has at least one recess communicating with the contact hole, and the recess has a bottom surface and at least one sidewall; a dielectric spacer liner (DSL) layer present on at least the sidewall of the recess; and at least one conductor present at least partially in the contact hole and electrically connected to the semiconductor substrate. |
| 地址 |
HSINCHU TW |
