Sputtering apparatus.

摘要

A high rate, low contamination, non-reactive sputter etching or deposition apparatus is disclosed. The apparatus comprises in a vacuum chamber a pair of parallel plate electrodes, cathode (17) and substrate (21), and an additional or wall electrode means (15) surrounding said other electrode means. That chamber includes inlet means for introducing an ionizable gas into said chamber. A source RF voltage is provided and means for supplying said RF voltage (13) to said additional wall electrode means. In one embodiment of the apparatus the additional wall electrode means has an area approximately equal to or larger than the sum of said substrate and cathode electrode area and said RF voltage is applied to said wall electrode means in phase and means are provided for varying the magnitude of the substrate electrode RF voltage with respect to the magnitude of the cathode voltage.