| 摘要 |
PURPOSE:To improve characteristics of electric chargeability, dark decay resistance, and photosensitivity by using a photoconductive layer constituted by laminating microcrystalline silicon layers each having a thickness of 3-50nm and different from each other in crystallinity. CONSTITUTION:A barrier layer 2, a photoconductive layer 3, and a surface layer 4 is successively laminated on a conductive substrate 1, and the photoconductive layer 3 is constituted by alternately laminating thin layers of muc-Si:H 11, 12 each having a film thickness of 3-50nm. Such an ultralatice structure constituted by laminating the thin layers different from each other in the optical band gap is used, thus permitting the obtained photosensitive body to be high in sensitivity in the wide wavelength regions from the visible region to the near infrared region, superior in the traveling property of carriers, high in resistivity, and superior in chargeability. |
