| 摘要 |
<p>A gate turn-off thyristor having an array of anode shorts (5) arranged, preferably, in concentric circular formations (11) and a cathode region (4) comprising an array of substantially linear elements (12) parallel to a radius and, divided into a number of sub-arrays each bounded by a sector (AOB) of a circle having a centre (O) co-axial with the anode formations. Preferably the included angle of a cathode array sector (AOB) is no greater than sixty degrees and the cathode strips (12) subtend an angle with respect to a radius which is no more than thirty degrees. Thus, the dynamic characteristics of the device are rendered, to a great extent at least independent of the relative angular orientation of the anode and cathode formations.</p> |
