发明名称 Dual port type semiconductor memory device realizing a high speed read operation.
摘要 <p>In a dual port type semiconductor memory device such as a FIFO, a register (12) is provided between a read side of a memory cell array (1) and a data output (Dout). When data is read from the memory cell array (1) to the data output (Dout), a content stored in the memory cell array is transmitted in advance by a preceding read instruction clock to the register (12), thereby enhancing the read operation speed.</p>
申请公布号 EP0272869(A2) 申请公布日期 1988.06.29
申请号 EP19870311041 申请日期 1987.12.15
申请人 FUJITSU LIMITED 发明人 AOYAMA, KEIZO
分类号 G06F5/10;G11C8/16 主分类号 G06F5/10
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