Heat-resistant thin film photoelectric converter

摘要

A heat-resistant thin film photoelectric converter, comprising a semiconductor layer, a front transparent electrode, a rear metal electrode, and a diffusion-blocking layer, said diffusion-blocking layer being provided between the semiconductor layer and the rear metal electrode and being a layer of metal silicide having a thickness of 5 ANGSTROM to 200 ANGSTROM . The converter of the present invention can avoid the reduction in the efficiency due to the diffusion of metal or metallic compound from the electrode into the semiconductor.