| 发明名称 |
Method for improved surface planarity in selective epitaxial silicon |
| 摘要 |
A method for growing selective epitaxial silicon by chemical vapor deposition resulting in a substantially planar surface by growing superimposed silicon layers at temperatures above and below a transition point.
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| 申请公布号 |
US4786615(A) |
申请公布日期 |
1988.11.22 |
| 申请号 |
US19870092267 |
申请日期 |
1987.08.31 |
| 申请人 |
MOTOROLA INC. |
发明人 |
LIAW, HANG M.;NGUYEN, HA T.-T. |
| 分类号 |
H01L21/20;(IPC1-7):H01L21/205;H01L21/76 |
主分类号 |
H01L21/20 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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