Semiconductor memory device having erroneous write operation preventing function

摘要

In a semiconductor memory device such as an E2PROM, a write enable signal (WE) is supplied to a buffer formed by an enhancement-type transistor (Q11) and a depletion-type transistor (Q12) having a node (N3). The potential at this node is applied to a set terminal of a flip-flop (FF), and only when the potential at the node is higher than a trip point of the flip-flop, is the flip-flop set to generate an internal write enable signal (IWE) for an actual write operation.