发明名称 |
Semiconductor memory device having improved precharge scheme |
摘要 |
A semiconductor memory device provided with an improved precharge scheme for bit lines is disclosed. A plurality of bit lines are divided into a plurality of bit line group and a precharge control signal is applied only to precharge transistors in a selected bit line group.
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申请公布号 |
US4817057(A) |
申请公布日期 |
1989.03.28 |
申请号 |
US19870015465 |
申请日期 |
1987.02.17 |
申请人 |
NEC CORPORATION |
发明人 |
KONDO, KENJI;RAI, YASUHIKO |
分类号 |
G11C11/409;G11C7/12;G11C8/12;G11C11/401;G11C11/41;G11C11/419;(IPC1-7):G11C7/00;G11C8/00 |
主分类号 |
G11C11/409 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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