| 摘要 |
The invention provides a method for manufacturing a semiconductor device, comprising the steps of: forming a mask material pattern at least on a portion of a semiconductor layer which corresponds to a prospective element formation region; etching the semiconductor layer, using the mask material pattern, to form a first groove which is wide and shallow; burying a first isolating material in the first groove to a thickness substantially equal to the depth of the first groove; etching a portion of the first isolating material film which is located in the vicinity of the prospective element formation region to partially expose a bottom of the first groove, thereby forming a second groove which is narrower than said first groove, a position of the second groove being defined by the mask material pattern; forming a third groove which is deeper than said first and second grooves by etching a bottom of the second groove; and burying a second isolating material in the third groove. |
